Information
- Designation : Assistant Professor
- Email : himanshu@ece.nits.ac.in
- Phone : 9732003148
Key Notes
- Journals: 8
- Book Chapters: 2
- PhD: Guided: 3
- Post Graduates: Guided: 3
- Under Graduates: Guided: 5
10
PUBLICATIONS3
DOCTORAL STUDENTSIntroduction [Biosketch]
- Dr. Himanshu Karan received the B. E. degree in Electronics and Communications Engineering from University Institute of Technology, University of Burdwan, India, the M. Tech. degree in Radio Physics & Electronics from the University of Calcutta, India. He received the Ph.D. degree in the specialization of Semiconductor Physics and Optoelectronic Devices from Institute of Radio Physics & Electronics, University of Calcutta, India, in 2020. He was with the department of Electrical Engineering, IIT Bombay, as a Postdoctoral Research Scientist. Currently, he is working as an Assistant Professor in the department of Electronics and Communication Engineering, National Institute of Technology Silchar, Assam, India. He has publications in peer-reviewed journals and conferences. His research interests include Semiconductor Physics and Optoelectronic Devices, Photonics Devices, Nanoelectronics Devices and Nitride Based LED, LASER, Solar Cell.
Areas of Interest
- Semiconductor Physics and Optoelectronic Devices, Photonics Devices, Nanoelectronics Devices, Nitride Based LED, LASER and Solar Cell.
| Institution | Year | Degree |
|---|---|---|
| University of Calcutta | 2020 | Ph. D (Tech.) |
| Institute of Radio Physics and Electronics, University of Calcutta | 2013 | M. Tech |
| University Institute of Technology | 2011 | B. E |
Teaching Experience
Dept. of ECE, National Institute of Technology Silchar
Swami Vivekananda Institute of Science and Technology
Industrial/Research Experience
Indian Institute of Technology, Bombay
University of Calcutta
University of Calcutta
Institute of Radio Physics and Electronics
H. Karan and A. Biswas, “High-performance type-II InGaN-ZnGeN2-InGaN/GaN multiple quantum well blue LEDs: design and analysis”, Physica Scripta (IOP Science), Volume 100, 055526, 2025, Indexed in SCI, Quartile: Q2
S. Mattaparthi, S. Tripathy and H. Karan, “Design of germanium based CsGeI3 and RbGeI3 double absorber layers perovskite solar cell”, Micro and Nanoelectronics Devices, Circuits and Systems, 2025, 199-207, Lecture Notes in Electrical Engineering (Springer), Indexed in Scopus
Optoelectronic device
S. Sutradhar and K. Krishna
Supervisor : H. Karan
Academic Year : 2024-2025
Optoelectronic device
B. Venugopal, D. Sristitha and V. N. Mudavath
Supervisor : H. Karan
Academic Year : 2024-2025
Optoelectronic device
Kunapareddy Mounish, Chukka Venkata Ramna and Miss Sumi Morang
Supervisor : H. Karan
Academic Year : 2023-2024
ML
Sangaru Suneel, Banoth Sairam and Eswar Kodali
Supervisor : H. Karan
Academic Year : 2023-2024
Photonic Devices
Karuna Rabha and Manas Jyoti Roy
Supervisor : H. Karan
Academic Year : 2022-2023
Nanoelectronic Device
Anisha Samanta
Co Supervisor : H. Karan
Academic Year : 2024-2025
Photonic Devices
Suraj Kumar
Co Supervisor : H. Karan
Academic Year : 2023-2024
Logic Devices
Suhas S Kashyap
Supervisor : H. Karan
Academic Year : 2023-2024
Nanoelectronic Device
Parasa Siva Gurga Rao
Ongoing
Co Supervisor : H. Karan
Photonic Devices
Kotta Sai Sudheer
Ongoing
Supervisor : H. Karan
Optoelectronic device
Srinivas Mattaparthi
Ongoing
Supervisor : H. Karan
